The chemical analysis of buried interfaces and thin films is mainly done through destructive methods like depth profiling XPS or SIMS. However the removal of material has generally major impact of the chemical state of the material and valuable chemical information is lost. With hard x-ray photoelectron spectroscopy the meanfree path of the primary photoelectrons is much larger and therewith the probing depth. HAXPES can probe buried interfaces and thin films to a depth of appr 50 nm without material removal or influencing the underlying chemistry.
application-products
HAXPES Lab, Lab10 MBE System, EVO 25/50 MBE and PVD 50 System
