The Hydrogen Atom Beam Source (HABS) is a thermal gas cracker which produces an ion-free hydrogen gas beam to avoid ion induced damage of the substrate. In comparison to hydrogen sources based on electron bombardment heating the HABS is heated by a DC operated tungsten filament. It is suitable for large samples.
- Low temperature surface cleaning of InP and GaAs
- Si substrate preparation / GaAs on Si
- Promotion of 2D growth of GaAs
- Selective epitaxial growth in MBE and GS MBE