The free standing silicon filament is directly heated by electrical current and is surrounded with high purity silicon shielding parts.
Extreme heating up of metal and ceramic parts is avoided by very effective water cooling of the electrical contacts and by shielding the hot silicon filament completely with silicon only. No insulating ceramic parts are used in the hot zone.
As the sublimating filament is totally surrounded by Si shielding parts the SUSI provides an extremely clean Si flux. In a well designed Si MBE chamber a pressure in the 10-10 Torr range is achieved while running the SUSI at maximum growth rate.
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- Growth of thin Si layers
- Si-doping for high mobility GaAs/AlGaAs heterostructures
- Fast and precise flux control
- Ultra high purity silicon filament