The Carbon Doping Source SUKO is a highly optimized source for carbon p-type doping in III-V MBE. The SUKO provides a very clean and constant flux at a low deposition rate up to 2 Å/min. A maximum total layer thickness of 5 µm C with one filament is reported, by what layers of up to 1 mm highly carbon-doped GaAs are achievable.
The sublimation of carbon requires very high temperatures up to 2300° C. Therefore we designed the hot zone around the filament completely shielded with pyrolytic graphite (PG).
- Growth of Si-C and Si-Ge-C alloys
- P-type doping in III-V MBE
- Fast and precise flux control
- Ultra high purity pyrolytic graphite (PG) filament
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